View CHE1270A_4207479.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CHE1270A
RoHS COMPLIANT
12-40GHz Wide Band Detector
GaAs Monolithic Microwave IC Description
The CHE1270A is a detector that integrates a matched detection diode (Vdet). A reference diode is also available to be used in differential mode (Vref). It is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. The circuit is manufactured with a Schottky diode MMIC process, 1m gate length, via holes through the substrate and air bridges. It is available in chip form.
RF IN
Matching
Vdet DC
Vref
Transmitted power detection (mV)
Main Features
Vdetect= Vref-Vdet (mV)
10000
12 GHz 32GHz
1000
17GHz 37GHz
22GHz 40GHz
27GHz
Wide frequency range 12-40GHz 30dB dynamic range
ESD protected Chip size: 1.41 x 0.89 x 0.1mm BCB layer protection
100
10
1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
Main Characteristics
Tamb = +25 Vdc = +4.5V C, Symbol F Dr RL Parameter Frequency range Dynamic range Return Loss Min 12
Input power (dBm)
Typ
Max 40
Unit GHz dB dB
30 -10
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHE1270A8205 - 25 Jun 08 1/6
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHE1270A
Electrical Characteristics (1)
Tamb = +25 Vdc = +4.5V C, Symbol F Dr IPd Frequency range Dynamic range (for Input Power detection) Input Power detection Parameter
12-40GHz Detector
Min 12
Typ
Max 40
Unit GHz dB
30 -15 10 to 2000 -8 -10 4.5 70 15
dBm mV dB dB V A
Vdetect Voltage detection Vref - Vdet from IPd_min to IPd_max RL Return Loss (12 - 14.5GHz) Return Loss (15 - 40GHz) Vdc Idc Bias voltage Bias current
(1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports but with 27k resistor in parallel on pads Vdet and Vref.
Absolute Maximum Ratings (1)
Tamb = +25 C Symbol Vdc IPd_max Top Tstg Bias voltage Maximum Input power Operating temperature range Storage temperature range Parameter Values 6 18 -40 to +85 -55 to +125 Unit V dBm C C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHE1270A8205 - 25 Jun 08
2/6
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12-40GHz Detector
Typical on-wafer measurements results
CHE1270A
Tamb = +25 Vdc = +4.5V, 27k resistor in parallel on pads Vdet and Vref C,
Return Loss versus frequency
0 -2 -4 -6 Return Loss (dB) -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Freq (GHz)
Transmitted power detection versus Input power 10000 12 GHz 32GHz Vdetect= Vref-Vdet (mV) 1000 17GHz 37GHz 22GHz 40GHz 27GHz
100
10
1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 Input power (dBm)
Ref. : DSCHE1270A8205 - 25 Jun 08
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
3/6
CHE1270A
12-40GHz Detector
Transmitted power detection versus frequency @ -15dBm Input power
40 35 30 25 20 15 10 5 0 12 14
Vdetect= Vref-Vdet (mV)
16
18
20
22
24
26
28
30
32
34
36
38
40
Freq (GHz)
Transmitted power detection versus frequency @ +15dBm Input power 2000 1900 1800 Vdetect= Vref-Vdet (mV) 1700 1600 1500 1400 1300 1200 1100 1000 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Freq (GHz)
Ref. : DSCHE1270A8205 - 25 Jun 08
4/6
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12-40GHz Detector
Chip Assembly and Mechanical Data
CHE1270A
DC Pads Size: 100/100 m, Chip thickness: 100 m
Note: Supply feed might be capacitively bypassed. 25m diameter gold wire is to be prefered.
Ref. : DSCHE1270A8205 - 25 Jun 08
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5/6
CHE1270A
Notes
RF IN
12-40GHz Detector
Matching
27k
Vdet DC
27k
Vref
Recommended external resistors assembly
27k resistors in parallel with Vdet and Vref pads are recommended to provide the best behaviour in the whole operating temperature range. As the voltage detection is the difference between Vref and Vdet, the external resistor value should be identical on these two ports. For information, a variation of 3% leads around 1mV variation of detected voltage. Due to ESD protection circuits on RF input, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF access. ESD protections are also implemented on Vdet and Vref accesses. Due to the BCB coating on the chip, qualification domain implies the chip must be glued.
Ordering Information
Chip form: CHE1270A-98F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S
Ref. : DSCHE1270A8205 - 25 Jun 08
6/6
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

▲Up To Search▲

Price & Availability of CHE1270A

	To Download CHE1270A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .